unisonic technologies co., ltd bcp68 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r207-008,e npn medium power transistor ? features * high current (max. 1 a) * low voltage (max. 20 v). * complementary to utc bcp69 ? applications * general purpose switching and am plification under high current conditions. sot-223 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 bcp68l-xx-aa3 - r bcp68g-xx-aa3 - r sot-223 b c e tape reel
bcp68 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-008,e ? absolute maximum ratings (t a =25 c , unless otherwise specified) parameter symbol ratings unit collector-base voltage (open emitter) v cbo 32 v collector-emitter voltage (open base) v ceo 20 v emitter-base voltage (open collector) v ebo 5 v collector current dc i c 1 a peak i cm 2 a peak base current i bm 200 ma total power dissipation (t a 25 ) p d 1.35 w junction temperature t j 150 operating temperature t opr -45 ~ +150 storage temperature t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 91 /w ? electrical characteristics (t j = 25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector-emitter satu ration voltage v ce ( sat ) i c = 1a, i b =100ma 500 mv base-emitter voltage v be i c = 5ma, v ce = 10v 620 mv i c = 1a, v ce = 1v 1 v collector cut-off current i cbo i e = 0, v cb = 25v 100 na i e = 0, v cb = 25v, t j = 150 10 a emitter cut-off current i ebo i c = 0, v eb = 5v 100 na dc current gain h fe i c = 5ma, v ce = 10v 50 i c = 500ma, v ce = 1v 85 375 i c = 1a, v ce = 1v 60 collector capacitance c c i e = i e = 0, v cb = 5v, f = 1mhz 48 pf transition frequency f t i c = -10ma, v ce = -5v, f = 100mhz 40 mhz dc current gain ratio of the complementary pairs h fe1 h fe2 |i c | = 0.5a, |v ce | = 1v 1.6 ? classification of h fe rank 16 25 range 100~250 160~375
bcp68 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-008,e ? typical characteristic 0 300 200 h fe 150 100 1 -10 -1 10 i c (ma) v ce = 1v dc current gain (typical values) 250 50 10 2 10 3 10 4 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
